TP65H050G4YS Single FETs, MOSFETs_Hongchangsheng Electronic_Supplier electronic component distributor

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

TP65H050G4YS

Single FETs, MOSFETs

Transphorm

650 V 35 A GAN FET HIGH VOLTAGE

Tube

402

Price:

$8.9190

inventory: 402

Total number

Quantity

Price

Total price

$12.9240

$11.3850

$113.8500

450

$8.9190

$4,013.5500

Obtain quotation information

product details

TP65H050G4YS

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

TP65H050G4YS

Single FETs, MOSFETs

Transphorm

650 V 35 A GAN

Single FETs, MOSFETs

Tube

402

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Transphorm
Series	SuperGaN®
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Power Dissipation (Max)	132W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	TO-247-4L
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V