18529516814;0755-83206150;83258002
  • image of Single FETs, MOSFETs>PSMN1R9-40YSBX
  • image of Single FETs, MOSFETs>PSMN1R9-40YSBX
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
PSMN1R9-40YSBX
Single FETs, MOSFETs
Nexperia
PSMN1R9-40YSB/SOT669/LFPAK
-
Tape & Reel (TR)
0
Price:
$0.5670
Total number

Quantity

Price

Total price

1

$1.2960

$1.2960

10

$1.0620

$10.6200

100

$0.8190

$81.9000

500

$0.6930

$346.5000

1500

$0.5670

$850.5000

3000

$0.5310

$1,593.0000

7500

$0.5130

$3,847.5000

10500

$0.4860

$5,103.0000

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product details
image of Single FETs, MOSFETs>PSMN1R9-40YSBX
PSMN1R9-40YSBX
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
PSMN1R9-40YSBX
Single FETs, MOSFETs
Nexperia
PSMN1R9-40YSB/S
Single FETs, MOSFETs
Tape & Reel (TR)
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrNexperia
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Rds On (Max) @ Id, Vgs1.9mOhm @ 25A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)194W (Tc)
Vgs(th) (Max) @ Id3.6V @ 1mA
Supplier Device PackageLFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6297 pF @ 20 V
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