NXH003P120M3F2PTNG FET, MOSFET Arrays_ Standard International_Supplier electronic component distributor

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

NXH003P120M3F2PTNG

FET, MOSFET Arrays

SILICON CARBIDE (SIC) MODULE EL

Tray

Price:

$218.0880

inventory: 20

Total number

Quantity

Price

Total price

$232.8480

$218.0880

$4,361.7600

$209.8890

$8,395.5600

Obtain quotation information

product details

NXH003P120M3F2PTNG

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

NXH003P120M3F2PTNG

FET, MOSFET Arrays

SILICON CARBIDE

FET, MOSFET Arrays

Tray

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	Silicon Carbide (SiC)
Power - Max	1.48kW (Tj)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds	20889pF @ 800V
Rds On (Max) @ Id, Vgs	5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs	1200nC @ 20V
Vgs(th) (Max) @ Id	4.4V @ 160mA
Supplier Device Package	36-PIM (56.7x62.8)