18529516814;0755-83206150;83258002
  • image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
  • image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
IPTC026N12NM6ATMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
TRENCH >=100V
-
Tape & Reel (TR)
0
Price:
$3.0870
Total number

Quantity

Price

Total price

1

$5.4450

$5.4450

10

$4.9140

$49.1400

25

$4.6890

$117.2250

100

$4.0680

$406.8000

250

$3.8880

$972.0000

500

$3.5460

$1,773.0000

1800

$3.0870

$5,556.6000

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product details
image of Single FETs, MOSFETs>IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
IPTC026N12NM6ATMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
TRENCH >=100V
Single FETs, MOSFETs
Tape & Reel (TR)
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
SeriesOptiMOS™ 6
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerSOP Module
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 115A, 10V
Power Dissipation (Max)3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id3.6V @ 169µA
Supplier Device PackagePG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 60 V
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