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  • image of Bipolar Transistor Arrays>BC817BPN
  • image of Bipolar Transistor Arrays>BC817BPN
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BC817BPN
Bipolar Transistor Arrays
Diotec Semiconductor
IC
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image of Bipolar Transistor Arrays>BC817BPN
BC817BPN
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
BC817BPN
Bipolar Transistor Arrays
Diotec Semiconductor
IC
Bipolar Transistor Arrays
Bulk
-
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrDiotec Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition100MHz, 80MHz
Supplier Device PackageSOT-26
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